- Temperature Performance:
150°C-Max.450°C
≥250°C ± 2.5°C
≤250°C ± 1.5°C - Temp Ramp-rate: 100°C-380°C (≥6°C/min)
- Temp Ramp-down: 380°C-100°C (≥3°C/min)
- Cleanliness: Class 100
- O2 Concentration: <10ppm
- Wafer handling:
Handling: 300&301mm
Thickness: 600-1500um (max.)
Warpage: +/- 450um
Weight: 230-250 g